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• W2149234648 abstract "A modified method has been developed for the deposition of transparent semiconducting thin films of tin oxide, involving the chemical vapour phase oxidation of tin iodide. These films show sheet resistances greater than 100 Ω/□ and an average optical transmission in the visible range exceeding 80%. The method avoids uncontrolled contamination, resulting in better reproducibility of the films. The films showed direct and indirect transitions and the possibility of an indirect forbidden transition. X-ray diffraction studies reveal that the films are polycrystalline. The low mobility values of the films have been attributed to the grain boundary scattering effect." @default.
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• W2149234648 date "1985-06-01" @default.
• W2149234648 modified "2023-09-27" @default.
• W2149234648 title "A method for the deposition of transparent conducting thin films of tin oxide" @default.
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• W2149234648 doi "https://doi.org/10.1016/0040-6090(85)90070-7" @default.
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