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- W2149254467 abstract "A 13.56 MHz parallel plate hydrogen-diluted silane plasma, operated at high pressure and high power, was used to deposit microcrystalline silicon solar cells with efficiencies of 6–9% at high deposition rates of 0.4–1.2 nm/s. In this regime new challenges arise regarding temperature control, since the high plasma power causes the substrate to heat up significantly during film deposition. We investigated this effect of plasma-induced substrate heating experimentally by means of pyrometric substrate temperature measurements and spectroscopic gas temperature measurements. The substrate temperature was observed to increase by up to 100 K during film deposition, depending on power density and deposition time. Performance of deposited solar cells decreased whenever the plasma induced heating caused a drift outside the ideal temperature window, of around 475 K (∼200 °C). Further analysis related this decrease in performance to the substrate temperature's influence on film crystallinity and open circuit voltage." @default.
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- W2149254467 date "2006-07-01" @default.
- W2149254467 modified "2023-10-14" @default.
- W2149254467 title "The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells" @default.
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- W2149254467 doi "https://doi.org/10.1016/j.tsf.2005.12.167" @default.
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