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- W2149264891 abstract "CVD W (0.45- mu m-thick) and CVD W (0.25- mu m-thick) strapped by Al (0.5- mu m-thick) have been used as metal 1 systems. Electrical and physical data are presented from experiments exploring the effects of processing issued with both electron-beam and stepper lithography, as well as dry-etch chemistry on both metal systems. The special issues encountered with the thick tungsten processing were: (1) significant electron-beam proximity related problems as compared to the sandwich metal layers; and (2) multiple etch related problems due to mask failure and a lack of etch selectivity. A high-selectivity etch was developed that greatly reduced underlying dielectric damage and allowed the used of relatively thin organic and PEO (plasma-enhanced oxide) hardmask layers without mask failure. >" @default.
- W2149264891 created "2016-06-24" @default.
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- W2149264891 date "2003-01-06" @default.
- W2149264891 modified "2023-09-25" @default.
- W2149264891 title "CVD tungsten metallization and electron beam lithography for fabricating submicron interconnects for advanced ULSI" @default.
- W2149264891 cites W1480727582 @default.
- W2149264891 doi "https://doi.org/10.1109/vmic.1988.14188" @default.
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