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• W2149295097 abstract "Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs suffer due to the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress." @default.
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• W2149295097 date "2004-10-26" @default.
• W2149295097 modified "2023-10-18" @default.
• W2149295097 title "Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors" @default.
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• W2149295097 doi "https://doi.org/10.1109/ipfa.2004.1345589" @default.
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