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- W2149305325 abstract "A high-temperature drain current jump in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in SIMOX SOI MOSFETs at temperatures above 200/spl deg/C. After a negative voltage has been applied to the substrate. A direct link of the current jump with the positive charge formation in the buried oxide (BOX) is demonstrated. The current jump, called front channel high-temperature kink-effect is explained by the compensation of positive charges in the (BOX), near the BOX-silicon film interface, by electrons." @default.
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- W2149305325 date "2002-11-27" @default.
- W2149305325 modified "2023-09-25" @default.
- W2149305325 title "The nature of high-temperature instability in fully depleted SOI IM n-MOSFETs" @default.
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- W2149305325 doi "https://doi.org/10.1109/hitec.1998.676792" @default.
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