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- W2149309259 abstract "We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrixand grown using Sb2 and As2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence upto room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growthtemperature (TGr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm rangeat room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit brightelectroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical propertiesof the structures grown using (Sb2,As2) and (Sb4,As4) is also presented." @default.
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- W2149309259 date "2008-02-07" @default.
- W2149309259 modified "2023-10-16" @default.
- W2149309259 title "Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb 2 and As 2 fluxes" @default.
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- W2149309259 doi "https://doi.org/10.1117/12.755465" @default.
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