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- W2149366543 abstract "Nowadays, the simple manufacturing process of CMOS transistor is widely used in digital designimplementation. Using the latest technology in fabrication, the sizes of semiconductor devices are evershrinking toward the nanotechnology. This paper presents the development of 80nm gate length of CMOSinverter with modification of the theoretical values in order to obtained more accurate process parameters.Simulation of the process and device fabrication using Sentaurus Synopsys TCAD has been carried out and theelectrical characteristics of the device were studied and analyzed. The result of the study indicates that theoperational of CMOS inverter was at VT = 0.499V, Ioff =79.08pA/ m and IDSAT = 429.3 A/ m for NMOS device.The values were then compared with 90nm CMOS inverter. The study also found that the leakage current of80nm CMOS transistor is almost twice higher than 90nm CMOS transistor." @default.
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- W2149366543 date "2008-01-01" @default.
- W2149366543 modified "2023-09-29" @default.
- W2149366543 title "Process and device simulation of 80nm CMOS inverter using Sentaurus Synopsys TCAD" @default.
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