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- W2149374085 abstract "Proximity X-ray lithography is one of the most promising candidate for mass production of the next generation ULSI devices. Among the key technologies of proximity X-ray lithography, fine and precise X-ray mask fabrication is most important issue. According to SIA Roadmap high-accurate image placement and CD control within 10 nm of X-ray mask are required for 0.1-/spl mu/m ULSI device fabrication. Therefore a great deal of developments should be achieved for X-ray mask fabrication which was contained mask materials and mask-fabrication processes including pattern delineation using electron-beam (EB) writer. Especially improvement in EB mask writing is indispensable for high-accurate image placement and CD control. In this paper, recent progress and future developments in EB mask writing for X-ray lithography are described." @default.
- W2149374085 created "2016-06-24" @default.
- W2149374085 creator A5038536112 @default.
- W2149374085 date "2003-01-20" @default.
- W2149374085 modified "2023-09-26" @default.
- W2149374085 title "Recent progress and future developments in EB mask writing for X-ray lithography" @default.
- W2149374085 doi "https://doi.org/10.1109/imnc.1999.797450" @default.
- W2149374085 hasPublicationYear "2003" @default.
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