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- W2149485586 abstract "GaAs-low compensated layers were grown by using an atmospheric MOCVD system. Solid arsenic and triethylgallium (TEG) were used as precursors. The layers exhibit an electron mobility greater than 30,000 cm 2 /V-sec at 77K for best growing conditions. This is the highest value reported until now for MOCVD GaAs grown by using non-arsine based alternative arsenic sources. The resulting layers were n-type with a minimum electron concentration of 10 15 cm -3 . The DLTS studies shown the EL2 electron level as the dominant trap with a concentration of 10 13 cm -3 ." @default.
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- W2149485586 date "2001-08-20" @default.
- W2149485586 modified "2023-09-27" @default.
- W2149485586 title "GROWTH AND CHARACTERIZATION OF GaAs BY METALORGANIC CHEMICAL VAPOR DEPOSITION USING TRIETHYLGALLIUM AND SOLID ARSENIC" @default.
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- W2149485586 doi "https://doi.org/10.1142/s0217984901002415" @default.
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