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- W2149632007 abstract "Ti based multilayer contacts on n-GaAs have been tested in respect to their short time annealing characteristics up to 800 °C. While the annealing range for Ti-Mo-Au Schottky barrier (SB) contacts is restricted to below 550 °C, Ti in combination with W and with Au overlay was found to produce essentially unchanged diode characteristics up to temperatures in the 700 °C range with the Ti/W film being stable even above 800 °C." @default.
- W2149632007 created "2016-06-24" @default.
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- W2149632007 date "1979-01-01" @default.
- W2149632007 modified "2023-10-16" @default.
- W2149632007 title "High temperature stable metal-GaAs contacts" @default.
- W2149632007 doi "https://doi.org/10.1109/iedm.1979.189658" @default.
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