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• W2149697246 abstract "Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2/spl times/10/sup 13/ to 2/spl times/10/sup 12/ eV/sup -1/ cm/sup -2/ following anneals in nitric oxide at 1175/spl deg/C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm/sup 2//V-s following the passivation anneals." @default.
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• W2149697246 date "2001-04-01" @default.
• W2149697246 modified "2023-10-16" @default.
• W2149697246 title "Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide" @default.
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• W2149697246 doi "https://doi.org/10.1109/55.915604" @default.
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