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- W2149708448 abstract "Corresponding author: Damian.Pucicki@pwr.wroc.plDouble quantum well (DQW) (In,Ga)(As,N)/GaAs p-i-n photodetectors, grown by solid sourcemolecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption forwavelengths above 870 nm have been investigated. The active region of the photodetectorscontained two very thin absorption layers: 10.5 nm Ga(As,N) (structure #DP02) or 4 nm(In,Ga)(As,N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/Wfor 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark currentof photodetectors did not exceed 0.1µA.Keywords: p-i-n photodetector, diluted nitrides, (In,Ga)(As,N), GaAs-based photodetectors, doublequantum well (DQW) heterostructures." @default.
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- W2149708448 date "2007-01-01" @default.
- W2149708448 modified "2023-09-24" @default.
- W2149708448 title "Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region" @default.
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