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• W2149771710 abstract "The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals. In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, ERD, SIMS) by studying investigating the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000{degree sign}C N2 annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5 at the TaN/HfO2 interface." @default.
• W2149771710 created "2016-06-24" @default.
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• W2149771710 date "2006-10-20" @default.
• W2149771710 modified "2023-09-27" @default.
• W2149771710 title "Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes" @default.
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• W2149771710 doi "https://doi.org/10.1149/1.2355708" @default.
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