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• W2149773199 abstract "Heavy-ion induced upsets are compared in dual-well and triple-well 40 nm CMOS SRAMs. Charge confinement in triple-well structures triggers the single-event upset reversal mechanism for high LET particles. Due to upset reversal, high LET ion-hits incident at off-normal angles show a decrease in SER compared to normally-incident ions for triple-well SRAM cells." @default.
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• W2149773199 date "2012-04-01" @default.
• W2149773199 modified "2023-09-25" @default.
• W2149773199 title "Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs" @default.
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• W2149773199 doi "https://doi.org/10.1109/irps.2012.6241845" @default.
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