FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2149807795> ?p ?o ?g. }

• W2149807795 endingPage "1937" @default.
• W2149807795 startingPage "1931" @default.
• W2149807795 abstract "We have performed an experimental study of the effects of ionizing radiation and bias-temperature stress on Si MOS devices with HfSiON gate dielectrics. We compare the responses of homogeneous high-SiN films and low-SiN films that contain crystalline HfO. We observe that the low-SiN films are more sensitive to ionizing radiation than the high-SiN films. In particular, the low-SiN film that includes crystalline HfO is especially vulnerable to electron trapping due to substrate injection under positive irradiation bias. Both film types exhibit reduced radiation-induced charge trapping relative to previous Hf silicates. The high-SiN film exhibits less radiation-induced net oxide-trap charge density than earlier Hf silicate films processed without nitride. We also find that these devices are relatively robust against bias-temperature stress instabilities. Consistent with the radiation response, the low-SiN devices also display elevated levels of charge trapping relative to the high-SiN devices during bias-temperature stress." @default.
• W2149807795 created "2016-06-24" @default.
• W2149807795 creator A5003182833 @default.
• W2149807795 creator A5007982912 @default.
• W2149807795 creator A5024126035 @default.
• W2149807795 creator A5030018313 @default.
• W2149807795 creator A5035965053 @default.
• W2149807795 creator A5045549438 @default.
• W2149807795 creator A5047449616 @default.
• W2149807795 creator A5049355880 @default.
• W2149807795 creator A5049822123 @default.
• W2149807795 creator A5073899315 @default.
• W2149807795 creator A5075909473 @default.
• W2149807795 date "2007-12-01" @default.
• W2149807795 modified "2023-10-17" @default.
• W2149807795 title "Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors" @default.
• W2149807795 cites W1626161525 @default.
• W2149807795 cites W1995036089 @default.
• W2149807795 cites W1998781562 @default.
• W2149807795 cites W2005098438 @default.
• W2149807795 cites W2014517187 @default.
• W2149807795 cites W2025661770 @default.
• W2149807795 cites W2037752059 @default.
• W2149807795 cites W2041424982 @default.
• W2149807795 cites W2045794387 @default.
• W2149807795 cites W2048557968 @default.
• W2149807795 cites W2050493779 @default.
• W2149807795 cites W2051400932 @default.
• W2149807795 cites W2054189715 @default.
• W2149807795 cites W2056905904 @default.
• W2149807795 cites W2063011696 @default.
• W2149807795 cites W2081454765 @default.
• W2149807795 cites W2083445634 @default.
• W2149807795 cites W2089678938 @default.
• W2149807795 cites W2090745963 @default.
• W2149807795 cites W2103139200 @default.
• W2149807795 cites W2126681496 @default.
• W2149807795 cites W2133188122 @default.
• W2149807795 cites W2134511326 @default.
• W2149807795 cites W2135162591 @default.
• W2149807795 cites W2139958681 @default.
• W2149807795 cites W2144102110 @default.
• W2149807795 cites W2145853149 @default.
• W2149807795 cites W2149340317 @default.
• W2149807795 cites W2159675689 @default.
• W2149807795 cites W2275498532 @default.
• W2149807795 doi "https://doi.org/10.1109/tns.2007.910862" @default.
• W2149807795 hasPublicationYear "2007" @default.
• W2149807795 type Work @default.
• W2149807795 sameAs 2149807795 @default.
• W2149807795 citedByCount "16" @default.
• W2149807795 countsByYear W21498077952014 @default.
• W2149807795 countsByYear W21498077952016 @default.
• W2149807795 countsByYear W21498077952018 @default.
• W2149807795 crossrefType "journal-article" @default.
• W2149807795 hasAuthorship W2149807795A5003182833 @default.
• W2149807795 hasAuthorship W2149807795A5007982912 @default.
• W2149807795 hasAuthorship W2149807795A5024126035 @default.
• W2149807795 hasAuthorship W2149807795A5030018313 @default.
• W2149807795 hasAuthorship W2149807795A5035965053 @default.
• W2149807795 hasAuthorship W2149807795A5045549438 @default.
• W2149807795 hasAuthorship W2149807795A5047449616 @default.
• W2149807795 hasAuthorship W2149807795A5049355880 @default.
• W2149807795 hasAuthorship W2149807795A5049822123 @default.
• W2149807795 hasAuthorship W2149807795A5073899315 @default.
• W2149807795 hasAuthorship W2149807795A5075909473 @default.
• W2149807795 hasBestOaLocation W21498077952 @default.
• W2149807795 hasConcept C111337013 @default.
• W2149807795 hasConcept C111368507 @default.
• W2149807795 hasConcept C119599485 @default.
• W2149807795 hasConcept C120665830 @default.
• W2149807795 hasConcept C121332964 @default.
• W2149807795 hasConcept C127313418 @default.
• W2149807795 hasConcept C127413603 @default.
• W2149807795 hasConcept C133386390 @default.
• W2149807795 hasConcept C138885662 @default.
• W2149807795 hasConcept C153385146 @default.
• W2149807795 hasConcept C165801399 @default.
• W2149807795 hasConcept C172385210 @default.
• W2149807795 hasConcept C18231593 @default.
• W2149807795 hasConcept C185544564 @default.
• W2149807795 hasConcept C18903297 @default.
• W2149807795 hasConcept C192562407 @default.
• W2149807795 hasConcept C195370968 @default.
• W2149807795 hasConcept C21036866 @default.
• W2149807795 hasConcept C2777289219 @default.
• W2149807795 hasConcept C2777924906 @default.
• W2149807795 hasConcept C41895202 @default.
• W2149807795 hasConcept C49040817 @default.
• W2149807795 hasConcept C52192207 @default.
• W2149807795 hasConcept C86803240 @default.
• W2149807795 hasConceptScore W2149807795C111337013 @default.
• W2149807795 hasConceptScore W2149807795C111368507 @default.
• W2149807795 hasConceptScore W2149807795C119599485 @default.
• W2149807795 hasConceptScore W2149807795C120665830 @default.
• W2149807795 hasConceptScore W2149807795C121332964 @default.
• W2149807795 hasConceptScore W2149807795C127313418 @default.
• W2149807795 hasConceptScore W2149807795C127413603 @default.

• next