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- W2149816080 abstract "We report the development of nitrogen-doped ZnTe back contacts for CdS/CdTe solar cells. Reproducible p-type doping of the ZnTe was achieved by reactive RF magnetron sputtering with Ar/N/sub 2/ gas mixtures. The conductivity of the doped films was about five orders of magnitude higher than that of intrinsic ZnTe sputtered films. These films were used as contacts for glass/SnO/sub 2//CdS/CdTe solar cells. The contact structure of ZnTe/ZnTe:N/Ni showed slightly lower initial performance but improved stability compared to our evaporated Cu/Au contacts for a 3000 hr test cycle at 100/spl deg/C." @default.
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- W2149816080 date "2002-11-11" @default.
- W2149816080 modified "2023-09-30" @default.
- W2149816080 title "ZnTe:N back contacts to CdS/CdTe solar cells" @default.
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- W2149816080 doi "https://doi.org/10.1109/pvsc.2000.915874" @default.
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