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- W2149885890 abstract "A formulation and implementation of the III–V FET nonlinear charge model decomposed into a combination of univariate voltage depletion charges and a bivariate mixed voltage-current dependent “drift” charge is presented. The concept is based on the principles used in well-established BJT models where depletion and diffusion charges are modeled separately. Analogous to the diffusion charge in BJT models, the drift charge represents the mobile carriers in the channel of the FET. The total charge depends on the depletion capacitances, drain current, and transit time, which links the FET charge model directly to the physical operation of the device. A measurement-based prototype model is demonstrated for a GaAs pHEMT using artificial neural networks to define the analytical constitutive relations of the depletion and drift charges." @default.
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- W2149885890 date "2011-06-01" @default.
- W2149885890 modified "2023-09-28" @default.
- W2149885890 title "III–V FET high frequency model with drift and depletion charges" @default.
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- W2149885890 doi "https://doi.org/10.1109/mwsym.2011.5972912" @default.
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