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• W2149905432 abstract "Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V/sub ot/ and V/sub it/ were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of triangle V/sub it/ and triangle V/sub ot/ taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986,1987); compressive stress at the silicon/SiO/sub 2/ interface does reduce radiation damage in the device.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2149905432 date "1992-12-01" @default.
• W2149905432 modified "2023-10-02" @default.
• W2149905432 title "Observation of radiation induced changes in stress and electrical properties in MOS devices" @default.
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• W2149905432 doi "https://doi.org/10.1109/23.211415" @default.
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