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W2150095727 abstract "Power gain (f MAX ) of 350 GHz and cut-off frequency (f T ) of 280 GHz is demonstrated for 36 nm L poly devices in a 45 nm bulk CMOS process. A record f T of 350 GHz (intrinsic f T 425 GHz), without any loss of f MAX is seen in 28 nm L poly devices. Combination of advanced lithography and liner stress effect can be leveraged to further boost f T and f MAX by 14% with a relaxed pitch device. Comparison with 90 and 65 nm nodes illustrates the impact of scaling and parasitics." @default.
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W2150095727 date "2007-06-01" @default.
W2150095727 modified "2023-09-26" @default.
W2150095727 title "Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process" @default.
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W2150095727 doi "https://doi.org/10.1109/vlsit.2007.4339725" @default.
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