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- W2150424992 abstract "Thin film of indium oxide (In2O3) is deposited on p-silicon substrate using sol–gel spin technique. The sol–gel spin deposited film is very smooth with grain size and root mean square surface roughness of ∼40 nm and ∼7.9 nm, respectively. The device parameters of Al/In2O3/p-Si Schottky diode were investigated using direct current current–voltage (I–V) and impedance spectroscopy. The ideality factor and barrier height of the diode were determined to be 1.07 ± 0.03 and 0.72 ± 0.02 eV, respectively. At higher voltages, the charge transport mechanism of the diode is controlled by a trap-charge limited conduction mechanism (TCLC). The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency." @default.
- W2150424992 created "2016-06-24" @default.
- W2150424992 creator A5052646915 @default.
- W2150424992 creator A5091126286 @default.
- W2150424992 date "2013-05-01" @default.
- W2150424992 modified "2023-10-02" @default.
- W2150424992 title "Analysis of device parameters of Al/In2O3/p-Si Schottky diode" @default.
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- W2150424992 doi "https://doi.org/10.1016/j.mee.2012.12.026" @default.
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