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• W2150465626 abstract "This study investigates GaAs dry etching in capacitively coupled <TEX>$BCl_3/N_2$</TEX> plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from <TEX>$100{sim}200W$</TEX> on the electrodes and a <TEX>$N_2$</TEX> composition ranging from <TEX>$0{sim}100%$</TEX> in <TEX>$BCl_3/N_2$</TEX> plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was <TEX>$0.4{mu}m/min$</TEX> at a 20 % <TEX>$N_2$</TEX> composition in <TEX>$BCl_3/N_2$</TEX> (i.e., 16 sccm <TEX>$BCl_3/4$</TEX> sccm <TEX>$N_2$</TEX>). It was also noted that the etch rate of GaAs was <TEX>$0.22{mu}m/min$</TEX> at 20 sccm <TEX>$BCl_3$</TEX> (100 % <TEX>$BCl_3$</TEX>). Therefore, there was a clear catalytic effect of <TEX>$N_2$</TEX> during the <TEX>$BCl_3/N_2$</TEX> plasma etching process. The RMS roughness of GaAs after etching was very low (<TEX>${sim}3nm$</TEX>) when the percentage of <TEX>$N_2$</TEX> was 20 %. However, the surface roughness became rougher with higher percentages of <TEX>$N_2$</TEX>." @default.
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• W2150465626 date "2009-03-01" @default.
• W2150465626 modified "2023-10-17" @default.
• W2150465626 title "Capacitively Coupled Dry Etching of GaAs in BCl3/N2 Discharges at Low Vacuum Pressure" @default.
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• W2150465626 doi "https://doi.org/10.3740/mrsk.2009.19.3.132" @default.
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