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• W2150489605 startingPage "08JH05" @default.
• W2150489605 abstract "We report on the fabrication and photovoltaic characterization of In 0.12 Ga 0.88 N/GaN multi-quantum-well (MQW) solar cells grown by metal–organic vapor phase epitaxy on (0001) sapphire substrates. Increasing the number of MQWs in the active region from 5 to 30 improves a factor of 10 the peak external quantum efficiency of the device at the price of a slight reduction and increase of the shunt and series resistance, respectively. Solar cells with 30 MQWs exhibit an external quantum efficiency of 38% at 380 nm, an open circuit voltage of 2.0 V, a short circuit current density of 0.23 mA/cm 2 and a fill factor of 59% under 1 sun of AM1.5G-equivalent solar illumination. Solar cells with the grid spacing of the top p-contact varying from 100 to 200 µm present the same device performance in terms of spectral response and conversion efficiency." @default.
• W2150489605 created "2016-06-24" @default.
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• W2150489605 date "2013-05-20" @default.
• W2150489605 modified "2023-10-18" @default.
• W2150489605 title "Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells" @default.
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• W2150489605 doi "https://doi.org/10.7567/jjap.52.08jh05" @default.
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