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• W2150796631 abstract "A semi-empirical model of surface scattering for Monte Carlo simulation of electrons in the silicon inversion layer at 300 K is proposed. The model compares favorably with different sets of experimental electron effective mobility data over a wide range of normal electric fields, channel impurity concentrations, and substrate bias. Comparisons between Monte Carlo and drift-diffusion simulations show that the model is able to correctly predict the device termination currents in the regime where nonequilibrium transport effects are negligible. It is expected therefore that at small device lengths the Monte Carlo predictions are also quantitatively correct.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2150796631 date "1992-01-01" @default.
• W2150796631 modified "2023-10-09" @default.
• W2150796631 title "A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs" @default.
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• W2150796631 doi "https://doi.org/10.1109/16.121694" @default.
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