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- W2151001610 abstract "Several microstructural parameters can be obtained from the HWHM (half width at half maximum) Γ of the TO-like mode and the peak positions in the Raman spectra of non-crystalline silicon materials (including multilayer and single thick films). These are the rms bond angle variation Δθ = (Γ − 7.5)/3 (deg) [1], the average distortion energy per bond (u) of the interface, and the stress near the interface (s̀), in a-Si: H layers. The grain size of the m̈c-Si films can be also obtained from Δd ∼ 2π(B/ΔωTO)1/2 [2]. The distortion energy is given by U = 3K(rdocumentclass{article}pagestyle{empty}begin{document}$ overline {Delta theta } $end{document})2, where K and r are the force constant of Si (9.2 x 103 dyn/cm2) and the bond length of Si (2.4 x 10−8 cm) [3], respectively, s̀ is equal to n x ΔU, n is the total number of distorted Si-Si bonds per unit area near the interface, and ΔU is the average excess distortion energy. The microstructural parameters of thick single m̈c-Si: B films and different composition-modulated superlattices are compared when the following quantities are changed: (1) ds (thickness of the a-Si: H layer), (2) R (the NH3/SiH4 ratio). The microstructures can well be understood after proper theoretical models are adopted, i.e., using the Peierls-Nabarro model, it can be explained that the stress near the interface is inversely proportional to the thickness of the a-Si:H layer (ds) within the range of a few monolayers. The Pantelides model can be used to explain the overcoordination of nitrogen in the a-Si: H layer near the interface. Einige Mikrostrukturparameter können aus dem HWHM (Halbwertsbreite am halben Maximum) Γ der TO-Mode und den Lagen der Maxima in den Ramanspektren nichtkristallinen Siliziums (einschließuch Mehrfachschichten und dicken Einfachschichten) erhalten werden. Diese sind die effektiven Bindungswinkeländerung Δθ = (Γ − 7,5)/3 (Grad) [1], die mittlere Verzerrungsenergie pro Bindung (u) der Grenzfläche und die Spannung in der Nähe der Grenzflächen (s̀) in a-Si:H-Schichten. Die Korngröße der m̈c-Si-Schichten kann ebenfalls aus Δd ∼ 2π(B/ΔωTO)1/2 erhalten werden [2]. Die Verzerrungsenergie wird durch U = 3K(rdocumentclass{article}pagestyle{empty}begin{document}$ overline {Delta theta } $end{document})2 gefunden, wobei K und r die Kraftkonstante von Si (9,2 x 103 dyn/cm2) bzw, die Bindungslänge von Si (2,4 x 10−8 cm) sind [3]. s̀ ist gleich n x ΔU, n ist dabei die Gesamtzahl der verzerrten Si-Si-Bindungen pro Flächeneinheit in der Nähe der Grenzfläche und ΔU ist der Mittelwert der Überschußverzerrungsenergie. Die Mikrostrukturparameter von dicken m̈c-Si: B-Einzelschichten und unterschiedlichen zusammensetzungsmodulierten Supergittern werden verglichen, wenn folgende Größen geändert werden: (1) ds (Dicke der a-Si: H-Schicht), (2) das NH3/SiH4-Verhältnis R. Die Mikrostrukturen lassen sich gut verstehen, wenn geeignete theoretische Modelle benutzt werden, z. B. bei Benutzung des Peierls-Nabarro-Modells kann erklärt werden, daß die Spannung in der Nähe der Grenzfläche umgekehrt proportional zur Dicke der a-Si: H-Schicht (ds) innerhalb des Bereiches einiger Monoschichten ist. Das Pantelides-Modell kann benutzt werden, um die Überkoordinierung von Stickstoff in der a-Si: H-Schicht in der Nähe der Grenzfläche zu erklären." @default.
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- W2151001610 date "1992-02-16" @default.
- W2151001610 modified "2023-10-16" @default.
- W2151001610 title "Microstructural Studies of Non-Crystalline Solid Silicon Films by TO-Like Modes of Raman Spectra" @default.
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- W2151001610 doi "https://doi.org/10.1002/pssa.2211290212" @default.
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