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• W2151165043 abstract "The unambiguous measurement of carrier concentration and mobility in semiconductor nanowires remains a challenging task. This is a consequence of their one-dimensional nature and the incompatibility with Hall or van der Pauw measurements. We propose a method that allows the direct determination of mobility and carrier concentration in nanowires in a contact-less manner. We demonstrate how forward Raman scattering enables the measurement of phonon–plasmon interactions. By applying this method to p-type GaAs nanowires, we were able to directly obtain values of the carrier concentration between 3.0 × 1017 and 7.4 × 1018 cm−3 and a mobility of 31 cm2 (V s)−1 at room temperature. This study opens the path towards the study of plasmon–phonon interactions in semiconductor nanowires." @default.
• W2151165043 created "2016-06-24" @default.
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• W2151165043 creator A5071359261 @default.
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• W2151165043 date "2012-01-01" @default.
• W2151165043 modified "2023-10-02" @default.
• W2151165043 title "Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy" @default.
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• W2151165043 doi "https://doi.org/10.1039/c2nr11910b" @default.
• W2151165043 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/22297540" @default.
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