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• W2151208895 abstract "In this brief, the effect of biaxial tensile strain on the hole mobility limited by substrate-impurity and interface-state Coulomb scatterings (musub and muit, respectively) in an inversion layer of (100)/lang110 rang pMOSFETs is investigated experimentally with strained-Si (s-Si) channels on relaxed Si1- xGex (x = 0.1-0.4) substrates. Our results show that biaxial tensile strain degrades the hole mobility limited by substrate-impurity Coulomb scattering (musub) , while it enhances the hole mobility limited by interface-state Coulomb scattering (muit) because of the increase in the average distance between holes and scattering centers at the Si/SiO2 interface after the tensile strain. These trends are opposite to that of electron ones. The different strain dependence between electrons and holes in terms of musub and muit can be explained by a universal two-band model based on the subband structures of electrons and holes." @default.
• W2151208895 created "2016-06-24" @default.
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• W2151208895 date "2009-05-01" @default.
• W2151208895 modified "2023-10-01" @default.
• W2151208895 title "Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs" @default.
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• W2151208895 doi "https://doi.org/10.1109/ted.2009.2015170" @default.
• W2151208895 hasPublicationYear "2009" @default.
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