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- W2151330778 abstract "In this paper we report on a newly developed nanowire based field-effect device-architecture (NWFET) that can be used in high temperature environments. Our devices posess both high temperature stability and low OFF-state current. By changes in source/drain bias-polarity the electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific application." @default.
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- W2151330778 date "2011-09-01" @default.
- W2151330778 modified "2023-09-30" @default.
- W2151330778 title "CMOS without doping: Midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications" @default.
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- W2151330778 doi "https://doi.org/10.1109/essderc.2011.6044184" @default.
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