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- W2151587767 abstract "The effects of different sintering procedures on the preparation of antiferroelectric thick films and the structure–property relations in these films were studied. An acetic acid-based sol–gel processing with multistep annealing and suitable lead oxide overcoat layers was developed to fabricate both niobium-doped and lanthanum-doped lead zirconate titanate stannate antiferroelectric thick films. The 5-μm-thick Pb0.99Nb0.02(Zr0.85Sn0.13Ti0.02)0.98O3 films demonstrate typical square hysteresis loops with a maximum polarization of 40 μC/cm2, zero remanent polarization, an antiferroelectric-to-ferroelectric phase transition field of 153 kV/cm, and a ferroelectric-to-antiferroelectric phase transition field of 97 kV/cm. The dielectric constant and dielectric loss are 283 and 1.7%, respectively. The 5-μm-thick Pb0.97La0.02(Zr0.65Sn0.31Ti0.04)O3 films display typical slanted hysteresis loops with very small hysteresis, a maximum polarization of 35.0 μC/cm2, and zero remanent polarization. The dielectric constant and dielectric loss are 434 and 2.0%, respectively." @default.
- W2151587767 created "2016-06-24" @default.
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- W2151587767 date "2004-12-22" @default.
- W2151587767 modified "2023-10-11" @default.
- W2151587767 title "Synthesis of Lead Zirconate Titanate Stannate Antiferroelectric Thick Films by Sol-Gel Processing" @default.
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- W2151587767 doi "https://doi.org/10.1111/j.1551-2916.1999.tb20062.x" @default.
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