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• W2151708034 abstract "The application of parallel-gap welding for bonding 5-mil annealed Pt wire to a 5000-AA Pt pad (with an underlying base of Ti, Mo, and W) sputter deposited on a sapphire substrate has been systematically examined. Optimum bonding parameters-force, voltage, duration, gap, and electrode width-have been developed for Cu-Cr and Mo-carbide electrodes which attain bond pull strengths approaching the tensile strength of the Pt wire without sapphire substrate microcracking. The Mo-carbide electrodes produced stronger bonds with less oxidation and pitting, and exhibited less electrode-wire adhesion than the Cu-Cr electrodes.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
• W2151708034 created "2016-06-24" @default.
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• W2151708034 date "1990-06-01" @default.
• W2151708034 modified "2023-09-27" @default.
• W2151708034 title "Parallel-gap welding to very-thin metallization for high temperature microelectronic interconnects" @default.
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• W2151708034 doi "https://doi.org/10.1109/33.56171" @default.
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