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- W2151974429 abstract "A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{10}^{3}$</tex></formula> , low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics." @default.
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- W2151974429 date "2010-09-01" @default.
- W2151974429 modified "2023-10-18" @default.
- W2151974429 title "Flexible Resistive Switching Memory Device Based on Graphene Oxide" @default.
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- W2151974429 doi "https://doi.org/10.1109/led.2010.2053695" @default.
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