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• W2152012503 abstract "During recent years, silicon carbide (SiC) power electronics has gone from being a promising future technology to being a potent alternative to state-of-the-art silicon (Si) technology in high-efficiency, highfrequency, and high-temperature applications. The reasons for this are that SiC power electronics may have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities. It is now a fact that several manufacturers are capable of developing and processing high-quality transistors at cost that permit introduction of new products in application areas where the benefits of the SiC technology can provide significant system advantages." @default.
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• W2152012503 date "2012-06-01" @default.
• W2152012503 modified "2023-10-13" @default.
• W2152012503 title "Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated" @default.
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• W2152012503 doi "https://doi.org/10.1109/mie.2012.2193291" @default.
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