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• W2152045306 startingPage "1400026" @default.
• W2152045306 abstract "pn-Heterodiodes comprising the wide bandgap semiconducting oxide In2O3 and amorphous p-conducting NiO or ZnCo2O4 are realized. In2O3 is grown at 600 °C and the amorphous p-type oxides at room temperature by pulsed-laser deposition. Highest rectification of about four orders of magnitude is observed for structures with Mg-doped In2O3 layers having lower carrier density than undoped layers. The p-ZnCo2O4/n-In2O3 diodes do not show degradation at elevated temperatures of 150 °C, whereas the p-NiO/n-In2O3 diodes degrade irreversibly for T > 100 °C. Thermal admittance spectroscopy revealed shallow defect levels in the In2O3 layer with activation energy of about 12 and 250 meV, respectively." @default.
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• W2152045306 date "2015-03-16" @default.
• W2152045306 modified "2023-10-16" @default.
• W2152045306 title "pn-Heterojunction Diodes with n-Type In₂O₃" @default.
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• W2152045306 doi "https://doi.org/10.1002/aelm.201400026" @default.
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