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• W2152337630 abstract "Low-frequency flicker noise in analog n-MOSFETs with 15-/spl Aring/ gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model." @default.
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• W2152337630 date "2005-09-01" @default.
• W2152337630 modified "2023-09-26" @default.
• W2152337630 title "Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling" @default.
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• W2152337630 doi "https://doi.org/10.1109/ted.2005.854264" @default.
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