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• W2152449149 abstract "In this paper, we have proposed a new method for the study of disturb failure mechanisms caused by stress induced leakage current (SILC) in source-side erased flash memories. This method is able to directly separate the individual components of SILC due to either carrier charging/discharging in the oxide or the positive charge/trap assisted electron tunneling into the floating gate. In addition, the present method is very sensitive with capability of measuring ultralow current (<10/sup -19/ A). Results show that, at low oxide field, the disturb is mainly contributed by the so-called charging/discharging of carriers into/from the oxide due to the capacitance coupling effect. While at high oxide field, the positive charge/trap assisted electron tunneling induced floating-gate charge variation is the major cause of disturb failure." @default.
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• W2152449149 date "2001-01-01" @default.
• W2152449149 modified "2023-09-26" @default.
• W2152449149 title "Characterization of hot-hole injection induced SILC and related disturbs in flash memories" @default.
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• W2152449149 doi "https://doi.org/10.1109/16.902731" @default.
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