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- W2152604102 abstract "In developing high sensitivity extreme ultraviolet (EUV) resists, we focused on the fact that EUV photon absorption bychalcogen atoms is larger than that by carbon or hydrogen atoms. We chose this focus because it is considered that inEUV the absorption of incident radiation by base polymers influences acid generation. To determine the effects ofintroducing chalcogen atoms into base polymers under EUV exposure on lithography performance, we synthesized novelco-polymers of novel methacylate monomers that included oxygen and sulfur atoms in acid-cleavable moiety as well aspolar monomers, and evaluated their sensitivity under EUV and ArF exposure. The sensitivity of polymers that were richin chalcogen atom content improved more under EUV exposure than under ArF exposure. We also used a highsensitivityquadrupole mass spectrometer (QMS) to observe the outgassing species generated from these polymers underEUV exposure in detail." @default.
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- W2152604102 date "2009-03-13" @default.
- W2152604102 modified "2023-09-23" @default.
- W2152604102 title "Evaluation of novel resist materials for EUV lithography" @default.
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- W2152604102 doi "https://doi.org/10.1117/12.813586" @default.
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