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• W2152687939 startingPage "1141" @default.
• W2152687939 abstract "Two key parameters for silicon MOSFET scaling, equivalent oxide thickness (EOT) and gate leakage current density (J/sub g/) are measured and modeled for silicon oxynitride (Si-O-N) gate dielectrics formed by plasma nitridation of SiO/sub 2/. It is found that n-MOSFET inversion J/sub g/ is larger than p-MOSFET inversion J/sub g/ when the gate dielectric consists of less than 27% nitrogen atoms, indicating substrate injection of electrons is dominant for this range of plasma nitrided Si-O-N. To examine the intrinsic scaling of Si-O-N, we model EOT and n-MOSFET J/sub g/ for sub-2-nm physically thick gate dielectrics as a function of film physical thickness and nitrogen content. The model has four free fitting parameters and unlike existing models does not assume a priori the values of the oxide and nitride dielectric constant, barrier height, or effective mass. It indicates that at a given EOT, leakage current of n-MOSFETs with Si-O-N gate dielectrics reaches a minimum at a specific nitrogen content. Through the use of this model, we find that plasma nitrided Si-O-N can meet the 65-nm International Technology Roadmap for Semiconductors specifications for J/sub g/, and we estimate the nitrogen concentration required for each node and application." @default.
• W2152687939 created "2016-06-24" @default.
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• W2152687939 date "2005-06-01" @default.
• W2152687939 modified "2023-10-18" @default.
• W2152687939 title "Model to Predict Gate Tunneling Current of Plasma Oxynitrides" @default.
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• W2152687939 doi "https://doi.org/10.1109/ted.2005.848083" @default.
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