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• W2152783299 abstract "Charge transfer and accumulation at semiconductor devices can lead to device degradation. Understanding and controlling such a process is therefore important. Second harmonic generation has been shown to be a sensitive probe of charging of semiconductor interfaces, with the added advantages of high spatial and temporal resolution. We have investigated the use of self assembled monolayers (SAMs) as a means to control charging. Our results suggest that octadecylsiloxane SAMs, bound to the native oxide, significantly reduce charge accumulation at oxide interfaces." @default.
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• W2152783299 date "2002-03-28" @default.
• W2152783299 modified "2023-09-23" @default.
• W2152783299 title "Second harmonic generation investigations of charge transfer at chemically-modified semiconductor interfaces" @default.
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• W2152783299 doi "https://doi.org/10.1063/1.1452774" @default.
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