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- W2152928525 abstract "We have systematically studied NMOSFETs, MOSCAPs, and the interfacial chemistry on GaAs (100), (110), (111)A and (111)B-four different crystalline surfaces with direct ALD Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> . We found that a much higher drain current on GaAs(111)A NMOSFET can be achieved compared to that obtained on the other 3 surfaces. Also, the results of MOS-CAPs and the interfacial chemistry obtained on the (111)A surface are very different from those others. These experimental results conclusively demonstrate that Fermi-level on the GaAs (111)A surface is indeed unpinned and Fermi-level pinning is not an intrinsic property of GaAs, but is orientation dependent thus related to surface chemistry." @default.
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- W2152928525 date "2009-12-01" @default.
- W2152928525 modified "2023-09-26" @default.
- W2152928525 title "New insight into Fermi-level unpinning on GaAs: Impact of different surface orientations" @default.
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- W2152928525 doi "https://doi.org/10.1109/iedm.2009.5424269" @default.
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