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• W2153106345 abstract "The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices." @default.
• W2153106345 created "2016-06-24" @default.
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• W2153106345 date "2015-10-23" @default.
• W2153106345 modified "2023-10-11" @default.
• W2153106345 title "High<i>I</i>_on/<i>I</i>_offcurrent ratio graphene field effect transistor: the role of line defect" @default.
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• W2153106345 doi "https://doi.org/10.3762/bjnano.6.210" @default.
• W2153106345 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4660928" @default.
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