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- W2153201517 abstract "<para xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> Silicon photonics is rapidly growing and a number of Si-based active and passive components have recently been demonstrated. We demonstrate new functionality of Er-doped silicon: a memory effect in electroluminescence. This finding opens a prospect of necessary, and thus far not available, component for Si optoelectronics—a fully complimentary metal–oxide–semiconductor-compatible electro-optical converter with a memory function, operating in the technologically important 1.5-<formula formulatype=inline><tex> $mu$</tex></formula>m band. When developed and optimized, prospect applications could include optical intra- and inter-chip connectors and volatile flash memory elements. </para>" @default.
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- W2153201517 date "2006-11-01" @default.
- W2153201517 modified "2023-10-07" @default.
- W2153201517 title "Er-Doped Electro-Optical Memory Element for 1.5-$mu$ m Silicon Photonics" @default.
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- W2153201517 doi "https://doi.org/10.1109/jstqe.2006.884062" @default.
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