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- W2153376695 abstract "Undoped and n-doped GaAs samples were studied after in-di!usion of copper by means of positron annihilation. During di!usion, small microvoids are formed which are decorated by copper atoms. The small clusters dissolve during annealing at „’850 K. ( 1999 Elsevier Science B.V. All rights reserved." @default.
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- W2153376695 date "1999-12-01" @default.
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- W2153376695 title "Formation of vacancy clusters during copper diffusion in GaAs" @default.
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- W2153376695 doi "https://doi.org/10.1016/s0921-4526(99)00618-3" @default.
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