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- W2153470042 abstract "Bismuth‐based ferroelectric oxide films including BiFeO 3 , Bi 2 WO 6 and BiVO 4 with different band structure are prepared by pulsed laser deposition method and used as n‐type semiconductors in photovoltaic devices. The oxide films are combined with p‐type organic semiconductor poly(3‐hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO 2 , the bismuth‐based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth‐based oxides are promising materials for photovoltaic devices." @default.
- W2153470042 created "2016-06-24" @default.
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- W2153470042 date "2012-02-13" @default.
- W2153470042 modified "2023-10-18" @default.
- W2153470042 title "The Application of Bismuth-Based Oxides in Organic-Inorganic Hybrid Photovoltaic Devices" @default.
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- W2153470042 doi "https://doi.org/10.1111/j.1551-2916.2012.05088.x" @default.
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