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- W2153520930 abstract "Abstract A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d 33 , of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d 33 . A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d 33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film." @default.
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- W2153520930 date "2007-01-01" @default.
- W2153520930 modified "2023-09-26" @default.
- W2153520930 title "High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films" @default.
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- W2153520930 doi "https://doi.org/10.1557/proc-1052-dd06-18" @default.
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