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• W2153604605 abstract "This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices, in which independent bias is capable for circuit flexibility, demonstrate superior specific on-resistance (e.g. 11.9 mΩ-mm2 for breakdown voltage of 39 V). Moreover, the unusual sudden current enhancement appeared in the I D -V D saturation region of most of the high voltage LDMOS devices is significantly suppressed." @default.
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• W2153604605 date "2012-06-01" @default.
• W2153604605 modified "2023-10-17" @default.
• W2153604605 title "0.18 &#x00B5;m BCD technology platform with best-in-class 6 V to 70 V power MOSFETs" @default.
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• W2153604605 doi "https://doi.org/10.1109/ispsd.2012.6229106" @default.
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