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• W2153772216 abstract "To achieve the required drive performance for sub 32 nm technology nodes there is strong interest in exploring the use of Ge-based technologies. This paper reviews some important processing aspects from a defect control viewpoint. Attention is given to crystal growth, shallow junction formation and germanidation techniques, respectively. The main focus is on defect related aspects. The last section deals with the device performance and the impact of processing on device leakage current and low frequency noise behavior." @default.
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• W2153772216 date "2007-06-01" @default.
• W2153772216 modified "2023-10-18" @default.
• W2153772216 title "Processing and Defect Control in Advanced Ge Technologies" @default.
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• W2153772216 doi "https://doi.org/10.1109/edst.2007.4289767" @default.
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