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• W2154328269 abstract "III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm." @default.
• W2154328269 created "2016-06-24" @default.
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• W2154328269 date "2015-11-09" @default.
• W2154328269 modified "2023-10-16" @default.
• W2154328269 title "III-nitride disk-in-nanowire 1.2 <i>μ</i>m monolithic diode laser on (001)silicon" @default.
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• W2154328269 doi "https://doi.org/10.1063/1.4935614" @default.
• W2154328269 hasPublicationYear "2015" @default.
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