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- W2154516074 abstract "Recently, hydrogen has been recognized as an important heteroatom in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) -type memories for its quality improvement. However, if stability of H atoms in SiN layers changes by applying high voltage, memory characteristics of MONOS-type memories change during program/erase (P/E) operations, resulting in memory degradation. Therefore, in this paper, we have investigated the stability of H atoms in SiN charge trapping layers of MONOS-type memories during P/E operations by using first principles calculations. Our calculations show that H atoms in Si or N vacancies in SiN layers become unstable and migrate when high voltage is applied, leading to memory degradation with changes of memory characteristics. This result clearly indicates that suppression of H atoms in SiN layers is necessary for realization of high quality MONOS-type memories." @default.
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- W2154516074 date "2011-09-01" @default.
- W2154516074 modified "2023-09-26" @default.
- W2154516074 title "First principle study of the stability of H atoms in SiN layers on MONOS-type memories during program/erase operations" @default.
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- W2154516074 doi "https://doi.org/10.1109/sispad.2011.6034917" @default.
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