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• W2154576726 abstract "A new ESD protection circuit, by using the stacked-NMOS triggered silicon controlled rectifier (SNTSCR) as the ESD clamp device, is designed to protect the mixed-voltage I/O buffers of CMOS IC's. Without using the thick gate oxide, the experimental results in a 0.35-mum CMOS process have proven that the human-body-model ESD level of the mixed-voltage I/O buffer can be successfully increased from the original ~2 kV to become > 8 kV by using this new proposed ESD protection circuit." @default.
• W2154576726 created "2016-06-24" @default.
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• W2154576726 date "2001-09-11" @default.
• W2154576726 modified "2023-10-03" @default.
• W2154576726 title "ESD protection design for mixed-voltage I/O buffer by using stacked-NMOS triggered SCR device" @default.
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• W2154576726 hasPublicationYear "2001" @default.
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