Matches in SemOpenAlex for { <https://semopenalex.org/work/W2154753412> ?p ?o ?g. }
Showing items 1 to 68 of
68
with 100 items per page.
- W2154753412 abstract "Bilayer Bi/In thin film thermal resists are Bi and In films which form an etch resistant material at ~7 mJ/cm<sup>2</sup> laser exposures with near wavelength invariance from visible to EUV. New simulations predicted that Bi/In film of 15/15nm absorbs substantially at 1 nm, which projects single pulse exposure sensitivity of ~16 mJ/cm<sup>2</sup>, hence suggesting good sensitivity to X-ray range. Thermal modeling has confirmed the exposure time/optical energy requirements for Bi/In. Exposed and developed Bi/In resist etches slower than silicon dioxide in alkaline-based silicon etchants TMAH, KOH, and EDP, making it a better masking layer for anisotropic Si etching. Also Bi/In has been used to create a direct-write photomask as its optical transmission changes from OD>2.9 before laser exposure to OD<0.26 after exposure. Both Bi/In anisotropic etching and direct write masks have been combined to successfully build test photocells with V-groove surface textures by using Bi/In masked silicon anisotropic etching and the other layers created using regular lithography but with Bi/In masks. These devices showed no operational differences from those created with regular resist processes. Investigation of resist interactions with Silicon after laser exposure and strip were done with Auger surface analysis which showed no detectable Bi or In contamination on substrates and no substrate sheet resistance change. X-ray diffraction and Rutherford back scattering tests suggest that the converted Bi/In may involve oxides." @default.
- W2154753412 created "2016-06-24" @default.
- W2154753412 creator A5039707757 @default.
- W2154753412 creator A5061097022 @default.
- W2154753412 creator A5091811470 @default.
- W2154753412 date "2003-06-11" @default.
- W2154753412 modified "2023-09-24" @default.
- W2154753412 title "Wavelength invariant Bi/In thermal resist as a Si anisotropic etch masking layer and direct-write photomask material" @default.
- W2154753412 cites W2024071430 @default.
- W2154753412 cites W2052956262 @default.
- W2154753412 cites W2108353309 @default.
- W2154753412 cites W2114911253 @default.
- W2154753412 cites W2127153262 @default.
- W2154753412 cites W2154605340 @default.
- W2154753412 cites W2171207633 @default.
- W2154753412 doi "https://doi.org/10.1117/12.485177" @default.
- W2154753412 hasPublicationYear "2003" @default.
- W2154753412 type Work @default.
- W2154753412 sameAs 2154753412 @default.
- W2154753412 citedByCount "4" @default.
- W2154753412 countsByYear W21547534122023 @default.
- W2154753412 crossrefType "proceedings-article" @default.
- W2154753412 hasAuthorship W2154753412A5039707757 @default.
- W2154753412 hasAuthorship W2154753412A5061097022 @default.
- W2154753412 hasAuthorship W2154753412A5091811470 @default.
- W2154753412 hasConcept C100460472 @default.
- W2154753412 hasConcept C120665830 @default.
- W2154753412 hasConcept C121332964 @default.
- W2154753412 hasConcept C14737013 @default.
- W2154753412 hasConcept C160671074 @default.
- W2154753412 hasConcept C171250308 @default.
- W2154753412 hasConcept C192562407 @default.
- W2154753412 hasConcept C204223013 @default.
- W2154753412 hasConcept C2779227376 @default.
- W2154753412 hasConcept C49040817 @default.
- W2154753412 hasConcept C520434653 @default.
- W2154753412 hasConcept C53524968 @default.
- W2154753412 hasConcept C544956773 @default.
- W2154753412 hasConceptScore W2154753412C100460472 @default.
- W2154753412 hasConceptScore W2154753412C120665830 @default.
- W2154753412 hasConceptScore W2154753412C121332964 @default.
- W2154753412 hasConceptScore W2154753412C14737013 @default.
- W2154753412 hasConceptScore W2154753412C160671074 @default.
- W2154753412 hasConceptScore W2154753412C171250308 @default.
- W2154753412 hasConceptScore W2154753412C192562407 @default.
- W2154753412 hasConceptScore W2154753412C204223013 @default.
- W2154753412 hasConceptScore W2154753412C2779227376 @default.
- W2154753412 hasConceptScore W2154753412C49040817 @default.
- W2154753412 hasConceptScore W2154753412C520434653 @default.
- W2154753412 hasConceptScore W2154753412C53524968 @default.
- W2154753412 hasConceptScore W2154753412C544956773 @default.
- W2154753412 hasLocation W21547534121 @default.
- W2154753412 hasOpenAccess W2154753412 @default.
- W2154753412 hasPrimaryLocation W21547534121 @default.
- W2154753412 hasRelatedWork W1712733447 @default.
- W2154753412 hasRelatedWork W1999414715 @default.
- W2154753412 hasRelatedWork W2023999549 @default.
- W2154753412 hasRelatedWork W2031639092 @default.
- W2154753412 hasRelatedWork W2057382384 @default.
- W2154753412 hasRelatedWork W2070089925 @default.
- W2154753412 hasRelatedWork W2079787243 @default.
- W2154753412 hasRelatedWork W2132357034 @default.
- W2154753412 hasRelatedWork W2549950089 @default.
- W2154753412 hasRelatedWork W2095184797 @default.
- W2154753412 isParatext "false" @default.
- W2154753412 isRetracted "false" @default.
- W2154753412 magId "2154753412" @default.
- W2154753412 workType "article" @default.