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• W2154769233 abstract "Defects produced by 0.6 MeV, 1 MeV, and 5 MeV electrons are compared with those produced by 2 MeV proton irradiations in p+n GaAs diodes using Deep Level Transient Spectroscopy (DLTS). The introduction rates are determined as a function of electron energy and compared with the nonionizing energy loss (NIEL). It has been determined that a majority of the electron-induced defects (E-traps) are similar to those observed following proton irradiation (PR-traps). However, a new defect emerges in the 5 MeV electron DLTS spectrum with a peak maximum occurring at ∼ 163 K which is not observed at the other electron energies. It has been determined that this new electron-induced defect which has previously not been detected is the proton-induced PR4'' defect. This defect emerges as the incident electron energy is increased suggesting it is formed by higher energy recoils and may be a complex defect. The recoil spectra are analyzed." @default.
• W2154769233 created "2016-06-24" @default.
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• W2154769233 date "2010-08-01" @default.
• W2154769233 modified "2023-09-24" @default.
• W2154769233 title "A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated ${hbox {p}} ^{+} {hbox {n}}$ GaAs Diodes" @default.
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• W2154769233 doi "https://doi.org/10.1109/tns.2010.2046335" @default.
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